BAS21H,115 datasheet

Маркировка

BAS21H,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BAS21H,115 Capacitance @ Vr, F: 5pF @ 0V, 1MHz Configuration: Single Current - Average Rectified (io): 200mA (DC) Current - Reverse Leakage @ Vr: 100nA @ 200V Diode Type: Standard Forward Continuous Current: 0.2 A Forward Voltage Drop: 1.25 V ID_COMPONENTS: 1942102 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Max Surge Current: 9 A Maximum Operating Temperature: + 150 C Maximum Reverse Leakage Current: 100 uA Minimum Operating Temperature: - 65 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Operating Temperature Range: + 150 C Package / Case: SOD-123 Flat Leads Peak Reverse Voltage: 250 V Product: Switching Diodes Recovery Time: 50 ns Reverse Recovery Time (trr): 50ns Series: - Speed: Small Signal =< 200mA (Io), Any Speed Voltage - Dc Reverse (vr) (max): 200V Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA Product Category: Diodes - General Purpose, Power, Switching RoHS: yes Factory Pack Quantity: 3000 Part # Aliases: BAS21H T/R Other Names: 934059307115, BAS21H T/R
Количество страниц

10 шт.
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60,75 KB